Optical proximity strategies for desensitizing lens aberrations

John S. Petersen

doi:10.1117/12.425214

26 April 2001 Optical proximity strategies for desensitizing lens aberrations

John S. Petersen

Proceedings Volume 4404, Lithography for Semiconductor Manufacturing II; (2001) https://doi.org/10.1117/12.425214
Event: Microelectronic and MEMS Technologies, 2001, Edinburgh, United Kingdom

Abstract

The use of image process integration to minimize the effect of lens aberrations on the micro lithographic imaging process is briefly surveyed. Examples show how field of curvature, focus and spherical aberrations can be minimized by using off-axis illumination and scattering bar OPC. Sub- resolution assist features redistribute the energy within the pitches' diffraction pattern, reducing the weighted average aberration. A demonstration of the use of scattering bars to balance the magnitude of aberrated diffraction orders to correct focus shifts of isolated to semi-isolated features is provided. This example shows the impact of symmetric aberrations on 100 nm images produced using off- axis 248 nm illumination, 0.7 numerical aperture and chrome less phase-shift mask for pitches of 260 nm, 300 nm, 350 nm, 400 nm, 500 nm, 600 nm, 1200 nm and 10000 nm.

Citation Download Citation

John S. Petersen "Optical proximity strategies for desensitizing lens aberrations", Proc. SPIE 4404, Lithography for Semiconductor Manufacturing II, (26 April 2001); https://doi.org/10.1117/12.425214

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