Analysis of two-dimensional PITS spectra for characterization of defect centers in high-resistivity materials

Michal Pawlowski; M. Miczuga; Pawel Kaminski; Roman Kozlowski

doi:10.1117/12.425431

17 April 2001 Analysis of two-dimensional PITS spectra for characterization of defect centers in high-resistivity materials

Michal Pawlowski, M. Miczuga, Pawel Kaminski, Roman Kozlowski

Author Affiliations +

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425431
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Deep states in semi-insulating Si are investigated by analyzing of two-dimensional Photo-Induced Transient Spectroscopy (PITS) spectra. The results exemplify new potentialities of the advanced computer programming technique.

Citation Download Citation

Michal Pawlowski, M. Miczuga, Pawel Kaminski, and Roman Kozlowski "Analysis of two-dimensional PITS spectra for characterization of defect centers in high-resistivity materials", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425431

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