Glass-ITO system as electron emitter

Jadwiga Olesik; Zygmunt Olesik; Michal Janusz Malachowski

doi:10.1117/12.425447

17 April 2001 Glass-ITO system as electron emitter

Jadwiga Olesik, Zygmunt Olesik, Michal Janusz Malachowski

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425447
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The thin transparent and conductive Sn doped In₂O₃ layers have been deposited onto both surfaces of the glass plate of dimensions 0.2x16x16 mm using the constant-current ion sputtering method. In order to study the electron emission the voltage has been applied between both the ITO layers. One of the layers was 1 micrometers thick (the field electrode) and another one (10nm and much thinner) was deposited onto the opposite surface of the glass. This thin layer was treated as the electron emitter. The polarizing voltage U_pol has been applied to the field electrode. The study has been carried out in vacuum (10^MIN7hPa). The multichannel analyzer of amplitude of voltage pulses created by the electron multiplier has been used in order to record the electron emission yield. Aside of the field effects the studies concerning the result of UV illumination on the photo emission monitored by field has been examined. Determined were the amplitude spectrum of the voltage pulses for various polarizing voltage. The same method was used to find the dependence of the pulse frequency n on the applied voltage U_pol. The exponential dependence n = f(U_pol) has been found. The field induced emission mechanism can be explained on the basis of the well known phenomena occurring in semiconductors under influence of strong electric field (the hot electron effect, the impact ionization, the Gunn effect, the tunnel effect, etc.). It was also found that additional effect at simultaneous emission of two electrons as a result of absorption of a single photon have to be taken into account. The existence of this effect has been proved by decomposition of the amplitude spectrum into Gaussians. Measurements of electron energy in the field induced emission showed that about 80% of electrons have energy up to 10 eV. Photo induced optical second harmonic (SHG) has been also observed in these films.

Citation Download Citation

Jadwiga Olesik, Zygmunt Olesik, and Michal Janusz Malachowski "Glass-ITO system as electron emitter", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425447

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available