Paper
29 June 2001 Analysis of phase-matching conditions for internal second-harmonic generation in InGaAs quantum well laser diodes
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Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432886
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania
Abstract
In this paper we present an analysis of the phase-matching conditions for internal second-harmonic generation in InGaAs quantum-well laser diodes in order to enhance the conversion efficiency. We have characterized the role of phase- mismatching in the spectral distribution of the internal second-harmonic generation in the CW operation of these lasers. The emission of pairs of narrow blue-green peaks having perfectly symmetrical spectral positions with respect to the central peak of pure second-harmonic generation at approximately 480 nm is most probably enhanced by a mechanism of reciprocal cancellation of the respective phase-mismatch vectors. This study is important for the assessment of the relationship between the structural parameters of the laser and the conditions which contribute to the stimulation of second-order optical nonlinearities in the laser active region.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Frunza, Emil Smeu, Niculae N. Puscas, Ion M. Popescu, and Grigore I. Suruceanu "Analysis of phase-matching conditions for internal second-harmonic generation in InGaAs quantum well laser diodes", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432886
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KEYWORDS
Second-harmonic generation

Semiconductor lasers

Indium gallium arsenide

Waveguides

Nonlinear optics

Quantum wells

Spectroscopy

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