Characterization of anodic oxide for GaAs-based laser diodes

Rodica V. Ghita; D. Pantelica; F. Negoita; S. Lazanu

doi:10.1117/12.432918

29 June 2001 Characterization of anodic oxide for GaAs-based laser diodes

Rodica V. Ghita, D. Pantelica, F. Negoita, S. Lazanu

Proceedings Volume 4430, ROMOPTO 2000: Sixth Conference on Optics; (2001) https://doi.org/10.1117/12.432918
Event: ROMOPTO 2000: Sixth Conference on Optics, 2000, Bucharest, Romania

Abstract

Anodic film oxide was deposited in a alcohol-glycol-water (AGW) solution on n-GaAs for passivation purpose in stripe technology for laser diodes. The characteristics of anodic oxide were measured by scanning electron microscopy (SEM), Rutherford backscattering (RBS) analysis and elastic recoil detection (ERD) techniques. The result indicates a complex oxide structure in the phase base Ga₂O₃:As₂O₃(1:1) joined together with carbon bonds. Due to the presence of carbon in anodic oxide, laser diodes are exposed to rapid degradation during operation.

Citation Download Citation

Rodica V. Ghita, D. Pantelica, F. Negoita, and S. Lazanu "Characterization of anodic oxide for GaAs-based laser diodes", Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); https://doi.org/10.1117/12.432918

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