RF magnetron sputtering SiOx, ZnS, and Al2O3 films for capsulation of nanostructured porous silicon

Liubomyr S. Monastyrskii; Roman M. Kovtun; Andrii P. Vlasov; Sergii O. Kostukevich

doi:10.1117/12.448181

12 November 2001 RF magnetron sputtering SiO_x, ZnS, and Al₂O₃ films for capsulation of nanostructured porous silicon

Liubomyr S. Monastyrskii, Roman M. Kovtun, Andrii P. Vlasov, Sergii O. Kostukevich

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448181
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

We were investigated photoemission properties of porous silicon capsulated by thin films SiOx,ZnS,Al2O3. This films were deposited by RF magnetron sputtering in argon-oxygen atmosphere and had crystalline structure. Light-emission spectra such double structure in visible and infra-red region were investigated.

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Liubomyr S. Monastyrskii, Roman M. Kovtun, Andrii P. Vlasov, and Sergii O. Kostukevich "RF magnetron sputtering SiO_x, ZnS, and Al₂O₃ films for capsulation of nanostructured porous silicon", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448181

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