Rutherford Scattering-Channeling Analysis Of Semiconductor Structures

L. C. Feldman

doi:10.1117/12.939305

10 May 1984 Rutherford Scattering-Channeling Analysis Of Semiconductor Structures

L. C. Feldman

Proceedings Volume 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I; (1984) https://doi.org/10.1117/12.939305
Event: 1983 Cambridge Symposium, 1983, Cambridge, United States

Abstract

The main concepts in ion scattering analysis of interfaces are reviewed and relevant literature is cited. High energy ion scattering has played an important role in the evolving understanding of semiconductor interfaces. A number of extensive reviews describe the fundamentals of this technique and its application to the study of semiconductor interfaces. The main purpose of this paper is to provide the reader with a guide to the existing literature on the subject. This brief review has been published in a similar form for the Materials Research Society Symposium on Interfaces and Contacts, 1982.

Citation Download Citation

L. C. Feldman "Rutherford Scattering-Channeling Analysis Of Semiconductor Structures", Proc. SPIE 0452, Spectroscopic Characterization Techniques for Semiconductor Technology I, (10 May 1984); https://doi.org/10.1117/12.939305

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