Design and fabrication of polarization-insensitive 1550-nm semiconductor optical amplifiers

Lijuan Yu; Wei-Hua Guo; Yongzhen Huang

doi:10.1117/12.445012

19 October 2001 Design and fabrication of polarization-insensitive 1550-nm semiconductor optical amplifiers

Lijuan Yu, Wei-Hua Guo, Yongzhen Huang

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.445012
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Citation Download Citation

Lijuan Yu, Wei-Hua Guo, and Yongzhen Huang "Design and fabrication of polarization-insensitive 1550-nm semiconductor optical amplifiers", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.445012

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