Laser-Induced Etching Of Insulators Using A DC Glow Discharge In Silane

J. M. Gee; P J Hargis Jr.

doi:10.1117/12.939448

14 June 1984 Laser-Induced Etching Of Insulators Using A DC Glow Discharge In Silane

J. M. Gee, P J Hargis Jr.

Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939448
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

We report a new method of laser-controlled etching in which the radiation from a pulsed-ultraviolet excimer laser is used to etch inorganic insulators exposed to plasma species that have been produced in a glow discharge sustained in silane. The maximum etch rate achieved was 50 nm/min for thin-film silicon dioxide.

Citation Download Citation

J. M. Gee and P J Hargis Jr. "Laser-Induced Etching Of Insulators Using A DC Glow Discharge In Silane", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939448

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