Quantum structure far-infrared photodetectors

Songcheol C. Hong; Ukhyun Lee; Jinsung Park; Dong-Han Lee

doi:10.1117/12.447116

30 October 2001 Quantum structure far-infrared photodetectors

Songcheol C. Hong, Ukhyun Lee, Jinsung Park, Dong-Han Lee

Proceedings Volume 4598, Photonics Technology in the 21st Century; (2001) https://doi.org/10.1117/12.447116
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore

Abstract

It is shown that the potential barrier introduced by p delta doping in n-i-n diode not only reduce the dark current but also enhance the responsivity. This was applied to both QWIP and QDIP. The QWIP is made of In0.3Ga0.7As/GaAs multiple quantum wells and the QDIP is made of p type self assembled InAs/GaAs quantum dots. The dark currents are reduced by an order of magnitude at 77K and the detectivities are increased. Thermal activation energies of PL peaks from various QD structures are investigated, which include the effects of barrier height , QD size and barrier materials.

Citation Download Citation

Songcheol C. Hong, Ukhyun Lee, Jinsung Park, and Dong-Han Lee "Quantum structure far-infrared photodetectors", Proc. SPIE 4598, Photonics Technology in the 21st Century, (30 October 2001); https://doi.org/10.1117/12.447116

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