Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0[sub]2[/sub] Interface

J. H. Mazur; R. Gronsky; J. Washburn

doi:10.1117/12.941353

31 May 1984 Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0₂ Interface

J. H. Mazur, R. Gronsky, J. Washburn

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941353
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The structure of interfaces between silicon oxides grown in dry oxygen on singular and vicinal (111) surfaces of silicon has been studied using cross-sectional high resolution transmission electron microscopy. Crystalline silicon was found to terminate abruptly on (111) planes, where it transforms to amorphous Si0₂. One interplanar distance high ledges, separated by (111) terraces were found to be present on all surfaces studied. The width of the terraces was surface orientation dependent. It is suggested that such a structure of the interface can be explained by a terrace-ledge-kink model and that high temperature oxidation proceeds by a ledge mechanism similar to that for evaporation from the surface.

Citation Download Citation

J. H. Mazur, R. Gronsky, and J. Washburn "Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si0₂ Interface", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941353

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