Efficient InAlGaP light-emitting diodes using radial outcoupling taper

Marcus Scherer; Barbara Neubert; Sven-Silvius Schad; Wolfgang Schmid; Christian Karnutsch; Walter Wegleiter; Andreas Ploessl; Klaus P. Streubel

doi:10.1117/12.469214

6 June 2002 Efficient InAlGaP light-emitting diodes using radial outcoupling taper

Marcus Scherer, Barbara Neubert, Sven-Silvius Schad, Wolfgang Schmid, Christian Karnutsch, Walter Wegleiter, Andreas Ploessl, Klaus P. Streubel

Author Affiliations +

Proceedings Volume 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI; (2002) https://doi.org/10.1117/12.469214
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

We present results on efficient InGaAlP light-emitting diodes using lateral outcoupling taper. This concept is based on light generation in the very central area of a circularly symmetric structure and, after light propagation between two mirrors, outcoupling in a tapered mesa region. We have demonstrated the suitability of this concept on As-based Light-Emitting Diodes emitting at 980 nm. Since the idea is not limited to a certain material system, we fabricated InGaAlP-based LEDs emitting in the red wavelength regime. By adjusting the process flow to the new material system we were able to achieve external quantum efficiencies in the range of 13% for unencapsulated devices. Additionally we present a new concept combining the idea of outcoupling tapers with a waferscale soldering technique. First samples show external quantum efficiencies in the range of 11%.

Citation Download Citation

Marcus Scherer, Barbara Neubert, Sven-Silvius Schad, Wolfgang Schmid, Christian Karnutsch, Walter Wegleiter, Andreas Ploessl, and Klaus P. Streubel "Efficient InAlGaP light-emitting diodes using radial outcoupling taper", Proc. SPIE 4641, Light-Emitting Diodes: Research, Manufacturing, and Applications VI, (6 June 2002); https://doi.org/10.1117/12.469214

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