Fabrication and characterization of laterally coupled lasers

Stefan McMurtry; Jean-Pierre Vilcot; Francis Mollot; Didier J. Decoster

doi:10.1117/12.470536

12 June 2002 Fabrication and characterization of laterally coupled lasers

Stefan McMurtry, Jean-Pierre Vilcot, Francis Mollot, Didier J. Decoster

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470536
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Twin stripes laser diodes emitting at 1.3 micrometers are presented. The InP based devices were fabricated using a GaInAsP based quantum well structure. The technological processes included wet etching and photolithography that allowed a good control of the heights of the laser. The top electrodes were obtained by e-beam lithography giving sufficient resolution to allow the fabrication of twin stripe lasers with an inter ridge space from 1 to 10 microns. The wet etch solutions were H₃PO₄/H₂O₂/H₂O for the top GaInAs layer and H₃PO₄/HCL for the InP layer, the first has the advantage of being selective on InP. The final top electrodes were deposited also by e-beam lithography over a BCB insulating layer. The final laser chips showed to be effective in power (8 mW per stripe) and had a typical threshold of 40 mA. Optical and electrical coupling were investigated and showed that both were present in the lasers. The electrical coupling phenomena results in the modification of the slope and the threshold of the P(I) function when the second laser is biased while the optical coupling is demonstrated by a coupling of light in the waveguide of the second laser (shorted) while the first one is biased.

Citation Download Citation

Stefan McMurtry, Jean-Pierre Vilcot, Francis Mollot, and Didier J. Decoster "Fabrication and characterization of laterally coupled lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470536

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