Paper
4 June 2002 Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm
Moritz Mueller, Norbert Linder, Christian Karnutsch, Wolfgang Schmid, Klaus P. Streubel, Johann Luft, Svent-Simon Beyertt, Adolf Giesen, Gottfried H. Doehler
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Abstract
The optically pumped semiconductor thin-disk laser with external-cavity (OPS-TDL) is a new type of semiconductor laser structure with the capability of achieving high output power while retaining good beam quality. We demonstrate the first AlGaInP-based red light emitting OPS-TDL structure. The device has been pumped optically with an argon-laser at 514~nm. The device has an epitaxial backside mirror and a multiple quantum well active region, consisting of strained InGaP quantum wells arranged in several groups as a periodic gain structure. A peak single-mode output power of more than 200mW at 660nm has been obtained in pulsed operation. Various designs for the active layer have been investigated.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Moritz Mueller, Norbert Linder, Christian Karnutsch, Wolfgang Schmid, Klaus P. Streubel, Johann Luft, Svent-Simon Beyertt, Adolf Giesen, and Gottfried H. Doehler "Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm", Proc. SPIE 4649, Vertical-Cavity Surface-Emitting Lasers VI, (4 June 2002); https://doi.org/10.1117/12.469242
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Cited by 42 scholarly publications.
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KEYWORDS
Semiconductor lasers

Quantum wells

Absorption

Semiconductors

Mirrors

Reflectivity

Optical pumping

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