Noninvasive electrical characterization of semiconductor and interface

Samir Kasouit; Bernard Drevillon; Joao Conde; Hyun Jong Kim; Jean Paul Kleider; Regis Vanderhaghen

doi:10.1117/12.467666

21 May 2002 Noninvasive electrical characterization of semiconductor and interface

Samir Kasouit, Bernard Drevillon, Joao Conde, Hyun Jong Kim, Jean Paul Kleider, Regis Vanderhaghen

Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467666
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The Spectroscopic Ellipsometry and the Time Resolved Microwave Conductivity (TRMC) are efficient tools for in-situ non invasive characterizations during the growth of semiconductors and interfaces. From ellipsometry, one estimates the optical absorption, structural composition of the material in the bulk and near the interface. The TRMC measures the transient microwave reflectivity induced by carriers photogenerated by a pulsed laser. From TRMC, one may estimate the mobility of the carriers in a thin film or in bulk materials, the carrier lifetime in the bulk or near the surface. Particularly, we characterize microcrystalline silicon : electron and hole mobility, electron mobility inside the grain, trapping.

Citation Download Citation

Samir Kasouit, Bernard Drevillon, Joao Conde, Hyun Jong Kim, Jean Paul Kleider, and Regis Vanderhaghen "Noninvasive electrical characterization of semiconductor and interface", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467666

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