Gain and carrier-induced refractive index change in group-III nitride quantum wells

Weng W. Chow; Hans Christian Schneider

doi:10.1117/12.467943

22 May 2002 Gain and carrier-induced refractive index change in group-III nitride quantum wells

Weng W. Chow, Hans Christian Schneider

Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467943
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

This paper analyses the gain and carrier-induced refractive index change in group-III nitride quantum wells. An approach based on the semiconductor Bloch equations with carrier-carrier collisions treated at the level of quantum kinetic theory is used. The influences of the strong carrier-carrier Coulomb interaction and the quantum-confined Stark effect on laser threshold and output beam quality are discussed.

Citation Download Citation

Weng W. Chow and Hans Christian Schneider "Gain and carrier-induced refractive index change in group-III nitride quantum wells", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467943

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