Semiconductor lasers tunable from 1.3 um to 1.54 um for optical communication

Yi-Shin Su; Ching-Fuh Lin; Di-Ku Yu; Bing-Ruey Wu

doi:10.1117/12.469638

7 June 2002 Semiconductor lasers tunable from 1.3 μm to 1.54 μm for optical communication

Yi-Shin Su, Ching-Fuh Lin, Di-Ku Yu, Bing-Ruey Wu

Proceedings Volume 4653, WDM and Photonic Switching Devices for Network Applications III; (2002) https://doi.org/10.1117/12.469638
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

Extremely broadband tunability of semiconductor lasers is achieved. The tuning range covers from 1300 nm to 1540 nm using nonidentical multiple quantum wells (MQWs) in the gain media. The broadband gain medium has two In_0.53Ga_0.47As quantum wells (Qws) near the n-cladding layer and three In_0.67Ga_0.33As_0.72P_0.28 Qws near the p-cladding layer. The sequence of the MQWs is also found to be very influential on the tuning range. For the sequence opposite to the above one, the tuning range is only from 1290 nm to 1450 nm. The reason is because the well sequence influences the carrier distribution. The broadband tunability is possible only when the QW structure could have a better uniformity of carrier distribution.

Citation Download Citation

Yi-Shin Su, Ching-Fuh Lin, Di-Ku Yu, and Bing-Ruey Wu "Semiconductor lasers tunable from 1.3 μm to 1.54 μm for optical communication", Proc. SPIE 4653, WDM and Photonic Switching Devices for Network Applications III, (7 June 2002); https://doi.org/10.1117/12.469638

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