Quantum dot infrared photodetectors

Zhengmao Ye; Joseph P. Campbell; Zhonghui Chen; E. T. Kim; Anupam Madhukar

doi:10.1117/12.460809

28 March 2002 Quantum dot infrared photodetectors

Zhengmao Ye, Joseph P. Campbell, Zhonghui Chen, E. T. Kim, Anupam Madhukar

Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460809
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

InAs quantum dot infrared photodetectors based on bound-to- bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 micrometers . At 77 K and -0.7 V bias the responsivity was 14 mA/W and the detectivity, D*, was 10¹⁰ cmHz^1/2/W. By introducing InGaAs cap layers, a QDIP with bias-controllable two-color characteristic was demonstrated.

Citation Download Citation

Zhengmao Ye, Joseph P. Campbell, Zhonghui Chen, E. T. Kim, and Anupam Madhukar "Quantum dot infrared photodetectors", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460809

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