Paper
16 July 2002 Exploring the resolution limits of phase-shift mask lithography with a very high numerical aperture ArF step-and-scan system
Harry Sewell, Pankaj Raval, Diane C. McCafferty
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Abstract
This paper studies the resolution limits of optical lithography using phase-shift mask technology. Alternating phase-shift masks are studied in the context of the 70nm lithographic node. The performance of alternating phase-shift masks is measured at the limits of its resolution. Printing issues that result from phase errors on the reticle are observed. These phase errors result in a loss of depth of focus and ultimate resolution. A lithography-system-based solution to the mask phase errors is proposed. A small obscuration aperture that matches the partial coherence of the illumination is placed in the pupil plane of optics to block the zero-order light leakage that results from the phase error. This paper reports the performance and effects of using this obscuration aperture.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry Sewell, Pankaj Raval, and Diane C. McCafferty "Exploring the resolution limits of phase-shift mask lithography with a very high numerical aperture ArF step-and-scan system", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473481
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Binary data

Lithography

Diffraction

Printing

Apodization

Optical lithography

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