Paper
18 June 1984 Precision Alignment For X-Ray Lithography
J L Kreuzer, G P Hughes, C LaFiandra
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Abstract
X-ray lithography promises cost-effective integrated circuit production with submicron resolution. Achievement of this promise requires precision mask-to-wafer alignment over the whole wafer. This paper describes Perkin-Elmer's X-100 full-field X-ray lithography system with emphasis on the alignment subsystem. The alignment subsystem provides six degrees of freedom alignment between wafer and mask with an air gauge gap setting technique and a laser based physical optics lateral alignment system. These techniques were selected to be compatible with the subfield-stepper systems needed to pattern wafers over 100 mm in diameter. The physical optics technique has demonstrated alignment stability with signal-to-noise ratios representing less than 0.01 micron rms error for a 30 Hz bandwidth. The alignment system and its relation to the entire lithographic system is described in detail. X-ray exposed alignment overlays are shown.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J L Kreuzer, G P Hughes, and C LaFiandra "Precision Alignment For X-Ray Lithography", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942329
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Optical alignment

Photomasks

Lithography

X-ray lithography

Zone plates

Optical lithography

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