Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers

Yasuhito Uchiyama; Hironori Nishino; Yusuke Matsukura; Tetsuya Miyatake; Kousaku Yamamoto; Toshio Fujii

doi:10.1117/12.478844

5 August 2002 Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers

Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Tetsuya Miyatake, Kousaku Yamamoto, Toshio Fujii

Author Affiliations +

Proceedings Volume 4721, Infrared Detectors and Focal Plane Arrays VII; (2002) https://doi.org/10.1117/12.478844
Event: AeroSense 2002, 2002, Orlando, FL, United States

Abstract

We investigated the behavior of the dark current (Id) in quantum well infrared photodetectors (QWIPs) in which the barrier layers were selectively doped instead of the well layers. Because the selective doping bends the conduction band (CB) edge in the portion of the barrier near the interface, the mechanism by which carriers in the wells can be emitted over the barriers, i.e. thermal emission and tunneling through this portion of the barrier, could be emphasized. We first confirmed that selectively doping the barrier layers clearly affects the Id-V characteristics. Then, by evaluating the activation energy obtained from the temperature dependence of Id, we found that the Poole-Frenkel emission (PFE) mechanism and the thermal-assisted tunneling (TAT)-like mechanism are dominant in the lower bias and higher bias regions, respectively.

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Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Tetsuya Miyatake, Kousaku Yamamoto, and Toshio Fujii "Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers", Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); https://doi.org/10.1117/12.478844

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