Applications of multiple-wavelength absorption endpoint system in photomask dry etcher

Dong-Soo Min; Pil-Jin Jang; Hyuk-Joo Kwon; Boo-Yeon Choi; Soo-Hong Jeong

doi:10.1117/12.476953

1 August 2002 Application of multiple-wavelength absorption endpoint system in photomask dry etcher

Dong-Soo Min, Pil-Jin Jang, Hyuk-Joo Kwon, Boo-Yeon Choi, Soo-Hong Jeong

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476953
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

Recently dry etcher system is a key process technology in preparation of photomask for next generation microelectronic device and endpoint detection system is an important part of the dry etch process, because mask CD control of Cr mask is more critical issues than before. In this paper, we describe real time endpoint system which is operated by optical emission multiple wavelength absorption for dry etch process of binary photomask. The end point detection system absorbs optical emission signal in real time, using optical cable from plasm chamber in dry etcher, and the signal is absorbed 200-800nm wavelength for a lot of grating manufactured by etch angel. The signal detects endpoint of process by association of one or several wavelength. We have tested newly developed EPD system and installed at PKLs dry etcher system, using various open area Cr mask with ZEP70000 resist. This study showed that multiple wavelength absorption technique is enough to detect endpoint down to 2 percent Cr loading masks and the EPD signal reproducibility was within 2 percent of EPD time at the same patterned masks.

Citation Download Citation

Dong-Soo Min, Pil-Jin Jang, Hyuk-Joo Kwon, Boo-Yeon Choi, and Soo-Hong Jeong "Application of multiple-wavelength absorption endpoint system in photomask dry etcher", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476953

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