Molecular contamination control in photomask/reticle manufacturing using chemically amplified resists (CAR) lessons from wafer lithography

James S. Hudzik; Oleg P. Kishkovich; John K. Higley

doi:10.1117/12.476949

1 August 2002 Molecular contamination control in photomask/reticle manufacturing using chemically amplified resists (CAR) lessons from wafer lithography

James S. Hudzik, Oleg P. Kishkovich, John K. Higley

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476949
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

Atmospheric pressure deep UV lithography using fast chemically amplified photoresists (CAR) will be the mainstay of photomask production into the foreseeable future. Issues surrounding the sensitivity of chemically amplified photoresists to molecular bases such as ammonia, NMP, TMA and related compounds, have been the sources of intensive study and numerous publications1,2,3. Photoresist sensitivity issues challenge photoresist suppliers' abilities to improve resistance to airborne molecular contamination, equipment suppliers' abilities to control molecular bases within the tool and photomask/reticle manufacturers' capability to adapt their cleanroom environments and lithography processes for CAR.

Citation Download Citation

James S. Hudzik, Oleg P. Kishkovich, and John K. Higley "Molecular contamination control in photomask/reticle manufacturing using chemically amplified resists (CAR) lessons from wafer lithography", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476949

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