Paper
1 August 2002 Next-generation mask metrology tool
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Abstract
For next generation photo mask lithography the tolerance range for pattern placement and critical dimensions (CD) is further shrinking. Improved optical resolution and precision of a metrology system are required to qualify the lithography tool and monitor the photo mask process. Edge detection methods in transmitted light mode for pattern placement and CD measurements are advantageous if the tightened resolution and precision requirements can be met. The new LMS IPRO2 using an illumination wavelength range of 360 to 410 nm has a significantly enhanced resolution for registration and CD measurements in both, transmitted and reflected light. A new laser interferometer with an enhanced resolution of 0.3 nm contributes to the overall improved system performance. The stage is designed to measure on quartz substrates and next generation lithography (NGL) reticles up to 230 mm square in transmitted light as well as in reflected light on 200 mm and 300 mm wafers for stepper qualification.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerhard Schlueter, Klaus-Dieter Roeth, Carola Blaesing-Bangert, and Michael Ferber "Next-generation mask metrology tool", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476920
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CITATIONS
Cited by 1 scholarly publication and 15 patents.
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KEYWORDS
Photomasks

Critical dimension metrology

Metrology

Optical testing

Image registration

Semiconducting wafers

Lithography

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