Femtosecond laser drilling of high-aspect-ratio 1-micron holes in silicon

Dennis R. Alexander; B. Mihulka; David W. Doerr

doi:10.1117/12.482107

13 September 2002 Femtosecond laser drilling of high-aspect-ratio 1-micron holes in silicon

Dennis R. Alexander, B. Mihulka, David W. Doerr

Proceedings Volume 4760, High-Power Laser Ablation IV; (2002) https://doi.org/10.1117/12.482107
Event: International Symposium on High-Power Laser Ablation 2002, 2002, Taos, New Mexico, United States

Abstract

There is a need in many scientific and manufacturing processes to drill to small diameter holes with high aspect ratios in both brittle materials as well as metals. Femtosecond lasers operating at 795 nm or frequency doubled to 400 nm provide a unique tool for carrying out these processes. In this work, the femtosecond laser nanomachining facilities at the University of Nebraska is discussed to drill 1 micrometers holes in Si/SiO₂ with aspect rations > 8. The quality of the cut and the small nanoparticles are discussed.

Citation Download Citation

Dennis R. Alexander, B. Mihulka, and David W. Doerr "Femtosecond laser drilling of high-aspect-ratio 1-micron holes in silicon", Proc. SPIE 4760, High-Power Laser Ablation IV, (13 September 2002); https://doi.org/10.1117/12.482107

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