Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy

B. A. Andreev; Z. F. Krasil'nik; D. I. Kryzhkov; V. P. Kuznetsov; E. N. Morozova; V. B. Shmagin; M. V. Stepikohova; A. N. Yablonskii

doi:10.1117/12.475319

12 July 2002 Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy

B. A. Andreev, Z. F. Krasil'nik, D. I. Kryzhkov, V. P. Kuznetsov, E. N. Morozova, V. B. Shmagin, M. V. Stepikohova, A. N. Yablonskii

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Proceedings Volume 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions; (2002) https://doi.org/10.1117/12.475319
Event: XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, 2001, Kazan, Russian Federation

Abstract

The intra-center 4f-shell transitions ⁴I_13/2 yields ⁴I_15/2 of Er³⁺ ion introduced into Si crystal under original Sublimation Molecular Beam Epitaxy (SMBE) process are investigated by low temperature photoluminescence spectroscopy with resolution down to 0.5 cm^-1. Er-related optically active centers detected in SMBE Si:Er/Si structures are classified based on their spectroscopic features. The novel optically active Er- related center Er-1 specific for SMBE Si:Er/Si structures is identified. A novel type of Si:Er/Si structures namely selectively Er-doped multilayer structures with enhanced luminescence efficiency grown in SMBE process is demonstrated. The features of the energy transfer to Er³⁺ ions in SMBE Si:Er/Si structures as compared with ion implanted Si:Er/Si structures are discussed.

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B. A. Andreev, Z. F. Krasil'nik, D. I. Kryzhkov, V. P. Kuznetsov, E. N. Morozova, V. B. Shmagin, M. V. Stepikohova, and A. N. Yablonskii "Er-related luminescence in Si:Er epilayers grown with sublimation molecular-beam epitaxy", Proc. SPIE 4766, XI Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, (12 July 2002); https://doi.org/10.1117/12.475319

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