Virtual bands model in porous silicon

Bassam Alfeeli; Khaled J. Habib

doi:10.1117/12.479650

16 August 2002 Virtual bands model in porous silicon

Bassam Alfeeli, Khaled J. Habib

Proceedings Volume 4775, Modeling and Characterization of Light Sources; (2002) https://doi.org/10.1117/12.479650
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Several models were presented in literature to explain the photoluminescence of porous silicon, suggesting carriers originate in Si nano-structure and recombine on the surface. None of the models have a clear justification on such carriers generation and carriers dynamics with respect to the mass conservation law, since the carriers are known to originate in one place and recombine in other. In this investigation a qualitative model, namely, the Virtual Band Model (VBM) is proposed to fill in the gabs which are raised in literature.

Citation Download Citation

Bassam Alfeeli and Khaled J. Habib "Virtual bands model in porous silicon", Proc. SPIE 4775, Modeling and Characterization of Light Sources, (16 August 2002); https://doi.org/10.1117/12.479650

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