Evaluation of nonlinearity effects in a semiconductor laser under direct overmodulation

Jean Le Bihan

doi:10.1117/12.525197

19 November 2003 Evaluation of nonlinearity effects in a semiconductor laser under direct overmodulation

Jean Le Bihan

Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.525197
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy

Abstract

Distortion occurs in the optical signal emitted by a semiconductor laser when it is overmodulated by a sinusoidal current. Only a rough analyse of this effect can be obtained using a static limiter as a first model for the laser. An improved dynamic model, including an hysteresis, is used here for describing additional distortion arising when the optical intensity rises above threshold.

Citation Download Citation

Jean Le Bihan "Evaluation of nonlinearity effects in a semiconductor laser under direct overmodulation", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.525197

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