Packaged 40-Gbit/s backslot-type LiNbO3 optical modulator with a low driving voltage of 2.8 V

Makoto Minakata; Jungo Kondo; Atuo Kondo; Kenji Aoki; Osamu Mitomi; Minoru Imaeda; Yoshinari Kozuka

doi:10.1117/12.475530

11 July 2002 Packaged 40-Gbt/s backslot-type LiNbO₃ optical modulator with a low driving voltage of 2.8 V

Makoto Minakata, Jungo Kondo, Atuo Kondo, Kenji Aoki, Osamu Mitomi, Minoru Imaeda, Yoshinari Kozuka

Proceedings Volume 4870, Active and Passive Optical Components for WDM Communications II; (2002) https://doi.org/10.1117/12.475530
Event: ITCom 2002: The Convergence of Information Technologies and Communications, 2002, Boston, MA, United States

Abstract

We propose a newly designed X-cut lithium niobate (LiNbO3) optical modulator. It has a two-step back-slot structure to satisfy the velocity matching condition without the buffer layer of silicon dioxide (Si02). Accordingly, this modulator can achieve low drive voltage and low optical insertion loss. In addition, dc-drift phenomena due to the buffer layer can be suppressed This structure is fabricated with micro-machining technology using excimer laser ablation. The optical 3-dBe bandwidth of fabricated modulator reaches 30GHz and the drive voltage is less than 3V at 1kHz. From the measurement of optical eye diagram at 43.5-Gb/s, the RF-extinction-ratio resulted in 12dB with the drive voltage of 4.lVp-p. This modulator has the sufficient capability for 40-Gb/s optical transmission systems.

Citation Download Citation

Makoto Minakata, Jungo Kondo, Atuo Kondo, Kenji Aoki, Osamu Mitomi, Minoru Imaeda, and Yoshinari Kozuka "Packaged 40-Gbt/s backslot-type LiNbO₃ optical modulator with a low driving voltage of 2.8 V", Proc. SPIE 4870, Active and Passive Optical Components for WDM Communications II, (11 July 2002); https://doi.org/10.1117/12.475530

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