Paper
29 August 2002 Fabricated technology for polymer/Si arrayed waveguide grating
Author Affiliations +
Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480994
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
In this paper, the basic principle, details of fabricating process and measuring results were described for a polymer/Si arrayed waveguide grating (AWG) multiplexer around the central wavelength of 1.550 micron with the wavelength spacing of 1.6nm. The fluorinated polymer was used to fabricate AWG to reduce the optical loss, but the fluorinated material was expensive, so we initially adopted the polymer of polymethylmethacrylate(PMMA) type to go on technologic research. The regulated curve of refractive index was given for the core polymer. In order to obtain better shape of the waveguide after the reactive ion etching (RIE) using oxygen, an aluminum film as mask was used on polymer instead of conventional photoresist as mask. In order to reduce radiation loss of underciadding layer to Si substrate, the underciadding layer thickness was increased to 11 micron through two times of spin-coating, thus the radiation loss was reduced to the order of 0.001dB. The measuring results indicates fabricated optical waveguide achieved single-mode transmission.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu Zhao, Fei Wang, Daming Zhang, Chunsheng Ma, Kaixin Chen, Shiyong Liu, and Maobin Yi "Fabricated technology for polymer/Si arrayed waveguide grating", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480994
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Waveguides

Polymers

Photomasks

Polymer multimode waveguides

Aluminum

Photorefractive polymers

Reactive ion etching

Back to Top