Paper
16 January 2003 Compact MMIC-Compatible RF MEMS Switch
Christopher W. Dyck, Thomas A. Plut, Christopher D. Nordquist, Garth M. Kraus, Gary D. Schmidt, Karl L. Gass, Patrick S. Finnegan, Isak C. Reines, Charles T. Sullivan
Author Affiliations +
Abstract
We have fabricated and tested a surface micromachined, metal-metal contacting radio frequency microelectromechanical systems (RF MEMS) switch. The switch was fabricated out of electroplated metals on semi-insulating GaAs at process temperatures below 300°C. It was anchored by folded springs to one end of a coplanar waveguide (CPW) gap, forming a cantilever. This configuration allowed us to simplify the fabrication process by eliminating mechanical dielectric films that are normally necessary to isolate the switch contact from the actuation metal. The measured insertion loss and isolation at S band were 0.21 dB and 28 dB isolation, respectively. An average switching speed of 83 μs at 55 volts was measured. This switch demonstrated >105 cold switching cycles without sticking, however rapid increase of the contact resistance was observed. A new switch was designed to increase isolation and reduce insertion loss by decreasing the coupling capacitance and increasing the contact force.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher W. Dyck, Thomas A. Plut, Christopher D. Nordquist, Garth M. Kraus, Gary D. Schmidt, Karl L. Gass, Patrick S. Finnegan, Isak C. Reines, and Charles T. Sullivan "Compact MMIC-Compatible RF MEMS Switch", Proc. SPIE 4981, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II, (16 January 2003); https://doi.org/10.1117/12.498237
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Switches

Switching

Microelectromechanical systems

Resistance

Metals

Capacitance

Electroplating

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