MEMS high-Q tunable capacitor for reconfigurable microwave integrated circuits

Christopher D. Nordquist; Arnoldo Muyshondt; Michael V. Pack; Patrick S. Finnegan; Christopher W. Dyck; Isak C. Reines; Garth M. Kraus; George R. Sloan; Charles T. Sullivan

doi:10.1117/12.480768

16 January 2003 MEMS high-Q tunable capacitor for reconfigurable microwave circuits

Christopher D. Nordquist, Arnoldo Muyshondt, Michael V. Pack, Patrick S. Finnegan, Christopher W. Dyck, Isak C. Reines, Garth M. Kraus, George R. Sloan, Charles T. Sullivan

Author Affiliations +

Proceedings Volume 4981, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II; (2003) https://doi.org/10.1117/12.480768
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States

Abstract

Future microwave networks require miniature high-performance tunable elements such as switches, inductors, and capacitors. We report a micro-machined high-performance tunable capacitor suitable for reconfigurable monolithic microwave integrated circuits (MMICs). The capacitor is fabricated on a GaAs substrate using low-temperature processing, making it suitable for post-process integration with MMICs, radio frequency integrated circuits (RFICs) and other miniaturized circuits. Additionally, the insulating substrate and high-conductivity metal provide low-loss operation at frequencies over 20 GHz. The device demonstrates a capacitance of 150 fF at 0 V bias, pull-in at about 15 V to 18 V, and further linear tuning from 290 fF to 350 fF over a voltage range of 7 V to 30 V. Also, the device demonstrates self-resonance frequencies over 50 GHz, and Q’s over 100 at 10 GHz. To enable integration into circuits, a simple equivalent circuit model of the device has been developed, demonstrating a good match to the measured data through 25 GHz. Initial testing to 1 billion cycles indicates that metal fatigue is the primary limitation to reliability and reproducibility, and that dielectric charging does not have a significant impact on the device. This device is promising for high-performance tunable filters, phase shifters, and other reconfigurable networks at frequencies through K-band.

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Christopher D. Nordquist, Arnoldo Muyshondt, Michael V. Pack, Patrick S. Finnegan, Christopher W. Dyck, Isak C. Reines, Garth M. Kraus, George R. Sloan, and Charles T. Sullivan "MEMS high-Q tunable capacitor for reconfigurable microwave circuits", Proc. SPIE 4981, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II, (16 January 2003); https://doi.org/10.1117/12.480768

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