Development of 850-nm VCSELs for high-speed interconnection systems

Noriyuki Yokouchi; Norihiro Iwai; Akihiko Kasukawa

doi:10.1117/12.480373

17 June 2003 Development of 850-nm VCSELs for high-speed interconnection systems

Noriyuki Yokouchi, Norihiro Iwai, Akihiko Kasukawa

Proceedings Volume 4994, Vertical-Cavity Surface-Emitting Lasers VII; (2003) https://doi.org/10.1117/12.480373
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Development of vertical cavity surface emitting lasers (VCSELs) at 850nm-wavelength for high speed interconnection systems is disclosed. The device structure is designed for a given set of static and dynamic characteristics. Electrical resistance, thermal characteristic and lateral mode characteristic are carefully designed and realized by a well-controlled fabrication process. 10Gbps transmission through a 500m-long, high-bandwidth multimode fiber is successfully demonstrated. An overview of 850nm-VCSEL technologies including future prospect is also described.

Citation Download Citation

Noriyuki Yokouchi, Norihiro Iwai, and Akihiko Kasukawa "Development of 850-nm VCSELs for high-speed interconnection systems", Proc. SPIE 4994, Vertical-Cavity Surface-Emitting Lasers VII, (17 June 2003); https://doi.org/10.1117/12.480373

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