Paper
17 June 2003 Long-wavelength VCSELs at Honeywell
Ralph H. Johnson, Virgil Blasingame, Jim A. Tatum, Bo-Su Chen, David T. Mathes, James D. Orenstein, Tzu-Yu Wang, Jin K. Kim, Ho-Ki Kwon, Jae-Hyun Ryou, Gyoungwon Park, Edith Kalweit, Helen Chanhvongsak, Mike D. Ringle, Terry Marta, Joe Gieske
Author Affiliations +
Abstract
In this paper we describe both the 1310 and 1550 nm VCSEL development work at Honeywell using both InP and GaAs substrates, and using both MOCVD and MBE. We describe the material systems, the designs, the growth techniques, and the promising results obtained and compare them to the needs of the communications industry. InGaAsN quantum well based VCSELs have been demonstrated to 1338 nm lasing at temperatures up to 90 C. Continuous wave InP based 1550 nm VCSELs have also been demonstrated.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralph H. Johnson, Virgil Blasingame, Jim A. Tatum, Bo-Su Chen, David T. Mathes, James D. Orenstein, Tzu-Yu Wang, Jin K. Kim, Ho-Ki Kwon, Jae-Hyun Ryou, Gyoungwon Park, Edith Kalweit, Helen Chanhvongsak, Mike D. Ringle, Terry Marta, and Joe Gieske "Long-wavelength VCSELs at Honeywell", Proc. SPIE 4994, Vertical-Cavity Surface-Emitting Lasers VII, (17 June 2003); https://doi.org/10.1117/12.488221
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Cited by 16 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Quantum wells

Mirrors

Metalorganic chemical vapor deposition

Nitrogen

Aluminum

Absorption

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