Resonant cavity enhanced GaAs/AlGaAs IR detectors

Dmitrii G. Esaev; S. G. Matsik; M. B. M. Rinzan; A. G. Unil Perera; Hui Chun Liu; Zbigniew R. Wasilewski; Margaret Buchanan

doi:10.1117/12.475401

1 July 2003 Resonant cavity enhanced GaAs/AlGaAs IR detectors

Dmitrii G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. Unil Perera, Hui Chun Liu, Zbigniew R. Wasilewski, Margaret Buchanan

Author Affiliations +

Proceedings Volume 4999, Quantum Sensing: Evolution and Revolution from Past to Future; (2003) https://doi.org/10.1117/12.475401
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors have been demonstrated with cutoff wavelengths λ_c up to 92 μm. One method of increasing the response in a desired range is to employ the cavity effect to create resonant maxima. Results are reported here confirming the presence of cavity enhancements in both the absorption and the detector response of HEIWIP structures at the 3λ/4 resonance. The detectors consisted of 13, 19 and 30 Be doped GaAs emitter and undoped Al_0.02Ga_0.98As barrier layers. Transmission and reflection spectra for multilayer GaAs/AlGaAs IR detectors in the range 2000-100 cm^-1 at room temperature are presented. Comparisons with the calculated results based on free carrier absorption and interaction with optical phonons model are reported. It is shown that the absorption can be maximized by using the resonant cavity effect. The use of the resonant cavity effect should allow the design of detectors with increased response in the desired wavelength ranges.

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Dmitrii G. Esaev, S. G. Matsik, M. B. M. Rinzan, A. G. Unil Perera, Hui Chun Liu, Zbigniew R. Wasilewski, and Margaret Buchanan "Resonant cavity enhanced GaAs/AlGaAs IR detectors", Proc. SPIE 4999, Quantum Sensing: Evolution and Revolution from Past to Future, (1 July 2003); https://doi.org/10.1117/12.475401

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