Pore sealing during epitaxy and annealing on Si(001) surface

A. V. Chemakin; I. G. Neizvestny; Natalia L. Shwartz; Zoja Sh. Yanovitskaya; Alexej V. Zverev

doi:10.1117/12.510519

11 June 2003 Pore sealing during epitaxy and annealing on Si(001) surface

A. V. Chemakin, I. G. Neizvestny, Natalia L. Shwartz, Zoja Sh. Yanovitskaya, Alexej V. Zverev

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.510519
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Using 3D Monte Carlo model evolution of Si(001) surface during epitaxy and high temperature annealing was investigated. The surface relief in the form of pyramidal pits is developed in the wide range of deposition rate. This relief prevents simultaneous creation of flat surface and thin solid layer formation over pores on Si(001) surface. Critical dose on (001) surface at the same deposition rates and temperatures was found to be an order of magnitude larger than on (111) surface.

Citation Download Citation

A. V. Chemakin, I. G. Neizvestny, Natalia L. Shwartz, Zoja Sh. Yanovitskaya, and Alexej V. Zverev "Pore sealing during epitaxy and annealing on Si(001) surface", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510519

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