Room-temperature electroluminescence at 1.55 um from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy

R. Oga; W. S. Lee; Y. Fujiwara; Y. Takeda

doi:10.1117/12.510424

11 June 2003 Room-temperature electroluminescence at 1.55 μm from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy

R. Oga, W. S. Lee, Y. Fujiwara, Y. Takeda

Author Affiliations +

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.510424
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

We have successfully observed room-temperature electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates. The InAs QDs were grown by droplet hetero-epitaxy using low-pressure organometallic vapor epitaxy (OMVPE). There were two kinds of InAs QDs; large and small QDs. The small InAs QDs with the average diameter and height of 40 nm and 7 nm were present at the density of 3 x 10¹⁰ cm^-2. In photoluminescence (PL) measurements at 77 K, a peak with full width of 84 meV at half maximum was observed around at 1506 nm. Room-temperature electroluminescence was successfully observed from InAs QDs embedded in InP matrix around at 1560 nm, together with InP emission at 980 nm. With increasing injection current density from 3 A/cm^-2 to 33 A/cm^-2, the shape of the spectra was unchanged, suggesting that the broadness of the luminescence is due to the size distribution of InAs QDs.

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R. Oga, W. S. Lee, Y. Fujiwara, and Y. Takeda "Room-temperature electroluminescence at 1.55 μm from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.510424

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