New materials for 193-nm bottom antireflective coatings

Marc Weimer; Vandana Krishnamurthy; Shelly Fowler; Cheryl Nesbit; James B. Claypool

doi:10.1117/12.485107

12 June 2003 New materials for 193-nm bottom antireflective coatings

Marc Weimer, Vandana Krishnamurthy, Shelly Fowler, Cheryl Nesbit, James B. Claypool

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485107
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

As the semiconductor industry constantly increases the information density and the speed of integrated circuits, the control over the shrinking critical dimension (CD) becomes increasingly important. Soon the current 248 nm exposure tools will be insufficient to meet the needs of the shrinking CD. Shorter wavelengths, such as 193 nm, will be required to progress to smaller feature size. However decreasing the exposure wavelength makes the control of the feature size even more difficult, due in part to a sharp increase in substrate reflectivity with decreasing wavelength. Controlling this reflectivity through the use of bottom antireflective coatings (BARCs) will play an important role in the success of upcoming lithographic technologies. While there are successful spindon organic BARCs for 193 nm lithography, continuing improvements in resist and process technology demand continuing improvements in BARCs. Described herein are the chemistry, methods, and performance of a highly versatile polymer for use as a future generation 193 nm spin-on thin film organic BARC. The versatility of the polymer functionality allows for cross-linking while baking by either a strong acid catalyzed thermal reaction without an additional cross-linking molecule, or an uncatalyzed thermal reaction with a cross-linker, both without off gassing. Attachment of a variety of chromophores is easily accomplished by a thermal reaction either to the polymer in solution or while on the wafer during baking. The versatility of having one polymer with functionality that allows for multiple modes of cross-linking, varied choice of chromophore, and method of chromophore attachment, provides a platform that can be easily tailored to meet the needs of the emerging 193 nm technology.

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Marc Weimer, Vandana Krishnamurthy, Shelly Fowler, Cheryl Nesbit, and James B. Claypool "New materials for 193-nm bottom antireflective coatings", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485107

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KEYWORDS

Chromophores

Reflectivity

Polymers

Silicon

Lithography

Bottom antireflective coatings

Molecules

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