Performances of resists for 157-nm lithography based on monocyclic fluoropolymers

Seiichi Ishikawa; Shigeo Irie; Toshiro Itani; Yasuhide Kawaguchi; Osamu Yokokoji; Shun-ichi Kodama

doi:10.1117/12.485051

12 June 2003 Performances of resists for 157-nm lithography based on monocyclic fluoropolymers

Seiichi Ishikawa, Shigeo Irie, Toshiro Itani, Yasuhide Kawaguchi, Osamu Yokokoji, Shun-ichi Kodama

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485051
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Fluoropolymers are key materials for the single-layer resists used in 157-nm lithography. We have been studying fluoropolymers to determine their potential for use as the base resin and have developed a monocyclic fluorinated polymer with a blocking group of Cyclohexylcyclohexyloxymethyl (CCOM) that has high transmittance (an absorption coefficient of 0.64 μm^-1) at a 157-nm exposure wavelength and high dry-etching resistance (a dry-etching rate of 1.75 times that of KrF resist) under organic bottom anti-reflective coating/hard mark dry-etching conditions. A resist based on our monocyclic fluoropolymer had high sensitivity. Using it, we were able to resolve a 60-nm line-and-space pattern using a 157-nm laser microstepper (numerical aperture = 0.85) with a resolution enhanced technology of an alternating phase-shifting mask. This polymer was demonstrated to simultaneously enable high transparency, high dry-etching resistance, and good imaging performance.

Citation Download Citation

Seiichi Ishikawa, Shigeo Irie, Toshiro Itani, Yasuhide Kawaguchi, Osamu Yokokoji, and Shun-ichi Kodama "Performances of resists for 157-nm lithography based on monocyclic fluoropolymers", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485051

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