Paper
26 June 2003 Impact of wavefront errors on low k1 processes at extremely high NA
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Abstract
This paper presents a comprehensive study of the impact of wavefront errors on low-k1-imaging performance using high numerical aperture NA lithographic systems. In particular, we introduce a linear model that correctly describes the aberration induced imaging effects. This model allows us to quantify the aberration requirements for future lithographic nodes. Moreover, we derive scaling laws characterizing the imaging performance in dependence on the key parameters exposure wavelength λ, NA, and k1. Our investigations demonstrate, first, that an accurate control of coma is and will be crucial, and, second, that spherical requirements will be very tight for k1<0.3 due to isolated contact printing. Finally, we summarize the results of this paper in a roadmap covering the aberration requirements in optical lithography down to the 45nm node. We conclude that the improvement of wavefront quality is necessary to enable imaging enhancement techniques, but is not sufficient to replace these techniques.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Graeupner, Reiner B. Garreis, Aksel Goehnermeier, Tilmann Heil, Martin Lowisch, and Donis G. Flagello "Impact of wavefront errors on low k1 processes at extremely high NA", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.482694
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KEYWORDS
Monochromatic aberrations

Critical dimension metrology

Lithography

Wavefronts

Lawrencium

Spherical lenses

Wavefront aberrations

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