Light emission from rare-earth-implanted GaN expected for full-color display

Akira Yoshida; Y. Nakanishi; Akihiro Wakahara

doi:10.1117/12.514829

14 October 2003 Light emission from rare-earth-implanted GaN expected for full-color display

Akira Yoshida, Y. Nakanishi, Akihiro Wakahara

Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514829
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India

Abstract

Rare-Earth (RE) was implanted to GaN epitaxial layer. Eu-implanted GaN films were annealed at the temperature range of 950 - 1100°C to reduce the implantation damages. Photoluminescence (PL) properties were measured, and strong emission at 621 nm corresponding to the transition from ⁵D₀ to ⁷F₂ states of Eu³⁺ was observed. The thermal quenching of PL intensity was very small and the peak position was not shifted. Large hardness for high energy electron-induced damages was observed.

Citation Download Citation

Akira Yoshida, Y. Nakanishi, and Akihiro Wakahara "Light emission from rare-earth-implanted GaN expected for full-color display", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); https://doi.org/10.1117/12.514829

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available