IR photodetectors based on MBE-grown MCT layers

Vladimir V. Vasilyev; Victor N. Ovsyuk; Yuri G. Sidorov

doi:10.1117/12.502164

14 April 2003 IR photodetectors based on MBE-grown MCT layers

Vladimir V. Vasilyev, Victor N. Ovsyuk, Yuri G. Sidorov

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502164
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

A complete technological cycle has been designed to produce photodetector arrays, which involves MBE growth of Hg_1-xCd_xTe (MCT) heteroepitaxial layers, fabrication of MCT-based photodetector structures, manufacture of silicon array multiplexers and hybrid assembly of a photodetector module consisting of a photodetector and multiplexer by means of indium micro bumps. Photoelectric parameters are given of photodetector array modules on the basis of photodiodes for the middle (3 - 3.5 μm) and far (8 - 12 μm) infrared ranges, operating at 78 - 80 K and 200 - 220 K temperatures.

Citation Download Citation

Vladimir V. Vasilyev, Victor N. Ovsyuk, and Yuri G. Sidorov "IR photodetectors based on MBE-grown MCT layers", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502164

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