Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors

Hao D. Xiong; Daniel M. Fleetwood; James R. Schwank

doi:10.1117/12.487870

12 May 2003 Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors

Hao D. Xiong, Daniel M. Fleetwood, James R. Schwank

Proceedings Volume 5113, Noise in Devices and Circuits; (2003) https://doi.org/10.1117/12.487870
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

We have measured the back channel low frequency noise of 0.6um*2.3um SOI nMOS transistors with a buried oxide thickness of 170 nm as a function of frequency (f), back gate bias (Vbg ), and temperature (T). For a temperature range of, noise measurements were performed at frequencies of, with top gate grounded and Vbg-Vbgth=4V, where Vbgth is the back gate threshold voltage. After zero-bias X-ray irradiation, the noise power increases, in agreement with previous work on the noise response of bulk MOSFETs. The temperature and frequency dependences of the 1/f noise of back channel SOI nMOS transistors shows thermally-activated charge exchange between the Si channel and defects in the buried oxide. Comparison is made with the Dutta and Horn model of 1/f noise. Devices on one particular wafer appear to show a mixture of 1/f noise and noise due to diffusion of a hydrogen-related species.

Citation Download Citation

Hao D. Xiong, Daniel M. Fleetwood, and James R. Schwank "Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors", Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); https://doi.org/10.1117/12.487870

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