Isochronal annealing of radiation defects in p-type silicon during irradiating with 8 MeV electrons

Zurab B. Basheleishvili; Teimuraz A. Pagava; Tamaz V. Eterashvili

doi:10.1117/12.517952

10 October 2003 Isochronal annealing of radiation defects in p-type silicon during irradiating with 8 MeV electrons

Zurab B. Basheleishvili, Teimuraz A. Pagava, Tamaz V. Eterashvili

Proceedings Volume 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2003) https://doi.org/10.1117/12.517952
Event: Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2002, St. Petersburg, Russian Federation

Abstract

The local irradation and the method of balk photo-e.m.f. measurement were used for a study of irradiation defects in p-type single silicon irradiated with 8 MeV energy electrons. On the basis of experimental and theoretical studies it was concluded that in irradiating p-type silicon with 8 MeV eneryg electrons the share of atomic cascades in radiation damage production begins to prevail over diffusion. Annealing results have shown that in this case it was possible to create tetra vacancies just like the primary defects are formed. Creation of small disordered areas is not excluded.

Citation Download Citation

Zurab B. Basheleishvili, Teimuraz A. Pagava, and Tamaz V. Eterashvili "Isochronal annealing of radiation defects in p-type silicon during irradiating with 8 MeV electrons", Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); https://doi.org/10.1117/12.517952

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