LEEPL mask fabrication using SOI substrates

Kenta Yotsui; Gaku Suzuki; Akira Tamura

doi:10.1117/12.504250

28 August 2003 LEEPL mask fabrication using SOI substrates

Kenta Yotsui, Gaku Suzuki, Akira Tamura

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504250
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

We have prepared 100-mm and 200-mm 1X stencil masks for low energy electron-beam proximity projection lithography (LEEPL) using silicon on insulator (SOI) substrates. We chose 200-mm without frame type format for production mask and 100-mm with NIST-like frame type for developing. And we employed COSMOS (complementary stencil masks on strut-supports) structure proposed by SONY to suppress in-plane distortion (IPD) of membrane. Our 100-mm mask contains 70-nm node device patterns. The critical dimension (CD) uniformity of a 100-nm width line patterns was 5.6 nm in range within 20-mm square area. The CD linearity of the line patterns was 5.5 nm in range throughout the range of 80- to 300-nm width. In our 200-mm mask, 100-nm width line patterns and 150-nm width hole patterns were successfully fabricated within 46-mm square area.

Citation Download Citation

Kenta Yotsui, Gaku Suzuki, and Akira Tamura "LEEPL mask fabrication using SOI substrates", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504250

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