Paper
28 August 2003 Transparent corner enhancement scheme for a DUV pattern generator
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Abstract
Mask cost is a key challenge for the semiconductor industry and a major issue is the write times of e-beam pattern generators. DUV pattern generators can provide high throughput, but there is a cost and time involved in qualifying these tools for IC production. To minimize this time and cost, the masks from the DUV tool should have pattern fidelity similar to that of e-beam tools. This can be done with corner enhancements on an imaging DUV mask writer. Here, we describe such a corner enhancement scheme and present results for the 65-nm-node requirements. We demonstrate how the corner radius can be tuned in a range of radii with a negligible effect on the process latitude.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Martinsson, Jonas Hellgren, Niklas Eriksson, Mans Bjuggren, and Tor Sandstrom "Transparent corner enhancement scheme for a DUV pattern generator", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504276
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Photomasks

Spatial light modulators

Deep ultraviolet

Mirrors

Image enhancement

Manufacturing

Optical simulations

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