Paper
20 October 2003 Active photonic crystal devices in III-V semiconductors
Author Affiliations +
Abstract
Recent progress toward wavelength-scale photonic crystal lasers is summarized. Lasing characteristics of two possible configurations of the unit-cell photonic crystal laser that has a central node through which current could be supplied. The very high quality factor in excess of 100,000 is theoretically expected from a square lattice unit-cell photonic crystal resonator. Applications of photonic crystals to other forms of active devices are also briefly discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong-Hee Lee, Han-Youl Ryu, Hong-Gyu Park, Sung Min Kwon, and Sang-Hoon Kim "Active photonic crystal devices in III-V semiconductors", Proc. SPIE 5225, Nano- and Micro-Optics for Information Systems, (20 October 2003); https://doi.org/10.1117/12.507872
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photonic crystals

Photons

Laser crystals

Photonic crystal devices

Semiconductor lasers

Resonators

Crystals

RELATED CONTENT

Ultralow-pump-threshold laser diode pumped Cr:LiSAF laser
Proceedings of SPIE (October 06 2003)
Toward the smallest possible photonic crystal lasers
Proceedings of SPIE (March 25 2004)
Analytical model of passively Q switched Nd YAG V YAG...
Proceedings of SPIE (February 27 2009)
Recent progress of semiconductor photonic crystals
Proceedings of SPIE (August 29 2002)

Back to Top