Photoconductivity of amorphous As2S3-Sb2S3 thin films

M. A. Iovu; Mihai S. Iovu; Sergiu D. Shutov

doi:10.1117/12.520035

30 September 2003 Photoconductivity of amorphous As₂S₃-Sb₂S₃ thin films

M. A. Iovu, Mihai S. Iovu, Sergiu D. Shutov

Proceedings Volume 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies; (2003) https://doi.org/10.1117/12.520035
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The results of steady state and transient photoconductivity characteristics of As-S-Sb thermally deposited amorphous thin films are presented. The lux-ampere characteristics of the steady-state photoconductivity are described by the power low dependence σ = B • F^γ with the power index [equation] where T* is the parameter of localized states distribution. The spectral characteristics of the photoconductivity for As-S-Sb thin films represents a curve with a broad peak centered at 2.50-1.93 eV, and is shifted in the low energy region of the spectrum when the Sb content is increasing in the glass alloy. The transient characteristics of As-S-Sb amorphous films are discussed in frame of trap-controlled model for an exponential distribution of localized states in the band gap of amorphous semiconductor.

Citation Download Citation

M. A. Iovu, Mihai S. Iovu, and Sergiu D. Shutov "Photoconductivity of amorphous As₂S₃-Sb₂S₃ thin films", Proc. SPIE 5227, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies, (30 September 2003); https://doi.org/10.1117/12.520035

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