Paper
19 February 2004 Three-dimensional CMOS image sensor with 4x64 pixel array
Omar M. Elkhalili, Olaf Schrey, Ralf F. Jeremias, Peter Mengel, Martin Petermann, Werner Brockherde, Bedrich J. Hosticka
Author Affiliations +
Abstract
A 3D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. It uses an active pulsed class 1 laser operating at 905nm to illuminate a 3D scene. The scene depth is determined by measurement of the travel time of reflected pulses by employing a fast on-chip synchronous shutter. A so-called “Multiple Double Short Time Integration” (MDSI) enables suppression of the background illumination and correction for reflectivity variations in the scene objects. The sensor chip contains 2 pixel lines with each pixel containing twin photodiodes, thus the chip contains 4×64 sensors. The chip allows two operating modes; the first is the binning mode (mode0 and mode1 are activated), where the twin pixels are short-circuited (tow lines on the die) and the average signal is measured. The second mode is the high-resolution mode (either mode0 or mode1 is activated). In this mode the pixels operate separately (four lines on the die). The chip has been realized in 0.5μm n-well standard CMOS process. The pixel pitch is 130μm. To get a good fill factor, the readout circuitry is located at the sides of the chip.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Omar M. Elkhalili, Olaf Schrey, Ralf F. Jeremias, Peter Mengel, Martin Petermann, Werner Brockherde, and Bedrich J. Hosticka "Three-dimensional CMOS image sensor with 4x64 pixel array", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); https://doi.org/10.1117/12.512930
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KEYWORDS
Sensors

Camera shutters

Pulsed laser operation

Cadmium sulfide

Clocks

3D image processing

Analog electronics

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