In1-xGaxAsyP1-y nipi structure and its application to semiconductor optical amplifiers

G. Ru; J. Yan; Z. B. Chen; Fow-Sen Choa; Terrance Worchesky

doi:10.1117/12.543845

15 December 2003 In_1-xGa_xAs_yP_1-y nipi structure and its application to semiconductor optical amplifiers

G. Ru, J. Yan, Z. B. Chen, Fow-Sen Choa, Terrance Worchesky

Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543845
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

In_1-xGa_xAs_yP_1-y nipi Structure has been grown by MOCVD and been characterized by photoluminescence. The two PL profiles from the direct and the indirect recombination channels were clearly observed. The excitation intensity and temperature dependence of the PL profiles are studied. A calculated carrier lifetime, as long as 71μs is possible to be realized. With such a long carrier lifetime, we can push the XT noise out of the signal band down to frequencies < f=f=1/(2πτ)=2.2kHz. Equivalently, the XT is eliminated.

Citation Download Citation

G. Ru, J. Yan, Z. B. Chen, Fow-Sen Choa, and Terrance Worchesky "In_1-xGa_xAs_yP_1-y nipi structure and its application to semiconductor optical amplifiers", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543845

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